EMI5201D8 8-lines emi filter with integrated esd protection descriptions the EMI5201D8 is a low pass filter array with integrated esd protection diodes. the device is a 3-pole inductor ? capacitor with a typical inductor value of 17nh and a capacitor value of 12pf, to achieve attenuation greater than -21db from 800mhz to 6.0ghz. this performance makes the device ideal for protection of lcd panels in cellular phones and other portable electronics. the specified attenuation range is very effective in minimizing interference from 2g/3g, gps, bluetooth and wlan signals. the EMI5201D8 is available in dfn3313-16l package. standard products are pb-free and halogen-free. features ? working voltage : 5v ? transient esd protection iec61000-4-2 , level 4 : 15kv air : 12kv contact ? bidirectional emi/rfi filter with integrated esd protection diodes ? filter performance: greater than -21db attenuation from 800mhz to 6.0ghz ? inductor of 17nh (typical) ? capacitor of 12pf (typical at vr=2.5v) ? protection for 8 lines. applications ? wireless handsets ? emi flitering for lcd and camera data lines ? emi flitering for and protection for i/o ports and keypads dfn3313-16l pin configuration (top view) dfn3313-16l 5201 = device code * = month(a~z) marking order information device package shipping EMI5201D8-16/tr dfn3313-16l 3000/tape&reel 5201 * 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 c 1 c 2 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) 1. 50 _ source and 50 _ load termination 8/20us waveform iec61000-4-2 waveform parameter symbol rating unit esd voltage iec61000-4-2 air v esd 15 kv esd voltage iec61000-4-2 contact 12 junction temperature t j 125 o c operating temperature t op -40~85 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c parameter symb ol condition min. typ. max. unit reverse maximum working voltage v rwm 5.0 v reverse leakage current i r v rwm =5v 1.0 ua reverse breakdown voltage v br i t =1.0ma 6.2 6.9 7.6 v forward voltage v f i f =20ma 0.55 0.9 1.25 v resistance r 10 ? inductance l 17 nh diode capacitance c 1 =c 2 f=1mhz, v r =2.5v 50mvac 12 pf line capacitance c t c 1 + c 2 20 24 28 pf 3db cut-off frequency 1 f 3db above this frequency. appreciable attenuation occurs 250 mhz stop band attenuation 800 mhz to 6.0 ghz 21 db t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) EMI5201D8 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) typical insertion loss curve capacitance vs. reveres voltage esd clamping voltage (iec61000-4-2 +8kv contact) power derating vs. temperature esd clamping voltage (iec61000-4-2 -8kv contact) 012345 10 15 20 25 30 35 40 45 50 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 1000000 1e7 1e8 1e9 1e10 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 s21(db) freq(hz) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) EMI5201D8 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn3313-16l recommend pcb layout (unit: mm) symbol dimensions in millimeters min. nom max. a 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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